| PART |
Description |
Maker |
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| ADG604 ADG604YRU ADG604YRUZ-REEL7 ADG604YRU-REEL A |
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer
1 pC Charge Injection, 100 pA Leakage CMOS 卤5 V/5 V/3 V 4-Channel Multiplexer
IC,ANALOG MUX,QUAD,1-CHANNEL,CMOS,TSSOP,14PIN,PLASTIC
1 PC CHARGE INJECTION, 100 PA LEAKAGE CMOS 5 V/5 V/3 V 4-CHANNEL MULTIPLEXER
1pC Charge Injection, Low Leakage CMOS 4-Channel Multiplexer
|
Analog Devices, Inc.
adi
|
| MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG |
N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
76 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| IRFN9140SMD IRFN9140SMDR4 |
P-CHANNEL POWER MOSFET
14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, SMD1, 3 PIN
ER 06 20 P/C 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
SEME-LAB[Seme LAB]
TT electronics Semelab, Ltd.
SEMELAB LTD
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
